NJG1145UA2 반도체 회로 부품 판매점
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
|
|
 New Japan Radio |
NJG1145UA2
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
I GENERAL DESCRIPTION
The NJG1145UA2 is a fully matched wide band low noise
amplifier GaAs MMIC for terrestrial and satellite applications.
To achieve wide dynamic range, the NJG1145UA2 offers high
gain mode and low gain mode. Selecting high gain mode for weak
signals, the NJG1145UA2 helps improve receiver sensitivity
through high gain and low noise figure. Selecting low gain mode
for strong signals, it bypasses LNA circuit to offer higher linearity.
In high gain mode, the NJG1145UA2 achieves high gain and
high IIP3 across the band.
The ESD protection circuits are integrated into the MMIC. They
achieve high ESD protection voltage.
An ultra-small and ultra-thin package of EPFFP6-A2 is adopted.
I PACKAGE OUTLINE
NJG1145UA2
I APPLICATION
Terrestrial and Satellite applications from 90MHz to2150MHz
Digital TV, CATV, BS/CS and Set-top box
LTE Router, modem and Base Station
I FEATURES
G Wide operating frequency range 90MHz~2150MHz
G Low voltage operation
2.8V typ.
G External components count
3pcs. (capacitor: 2pcs, inductor: 1pc)
G Small package size
EPFFP6-A2 (package size: 1.0mmx1.0mmx0.37mm typ.)
[High gain mode]
G Current consumption
20mA typ.
G High gain
+15.0dB typ.
G Low noise figure
1.5dB typ.
[Low gain mode]
G Low current consumption
11µA typ.
G Gain(Low loss)
-1.0dB typ.
I PIN CONFIGURATION
(Top View)
RFIN 5 GND
VCTL
64
Logic
circuit
Bypass circuit
1PIN INDEX
LNA circuit
Bias
circuit
1
GND
GND 2
3
RFOU
Pin Connection
1. GND
2. GND
3. RFOUT
4. VCTL
5. GND
6. RFIN
I TRUTH TABLE
VCTL
H
L
“H”=VCTL(H)“L”=VCTL(L)
LNA ON
Bypass
ON
OFF
OFF
ON
LNA mode
High Gain mode
Low Gain mode
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2013-04-17
-1-
NJG1145UA2
I ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
CONDITIONS
Ta=+25°C, Zs=Zl=50 ohm
RATINGS UNITS
Supply voltage
Control voltage
VDD
VCTL
5.0 V
5.0 V
Input power
PIN VDD=2.8V
Power dissipation
PD
4-layer FR4 PCB with through-hole
(101.5x114.5mm), Tj=150°C
Operating temperature
Topr
+15
590
-40~+85
dBm
mW
°C
Storage temperature
Tstg
-55~+150
°C
I ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)
General conditions: VDD=2.8V, Ta=+25°C, Zs=Zl=50 ohm
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Operating voltage
Control voltage (High)
Control voltage (Low)
Operating current1
VDD
VCTL(H)
VCTL(L)
IDD1 RF OFF, VCTL=1.8V
2.3 2.8 3.6
V
1.3 1.8 3.6
V
0.0 0.0 0.5
V
- 20.0 27.0 mA
Operating current2
Control current
IDD2 RF OFF, VCTL=0V
ICTL RF OFF, VCTL=1.8V
- 11.0 25.0 µA
- 6.0 10.0 µA
-2-
|
PDF 파일 내의 페이지 : 총 20 페이지
제조업체: New Japan Radio
( njrc )
NJG1145UA2 amplifier
데이터시트 다운로드 :
[ NJG1145UA2.PDF ]
[ NJG1145UA2 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
