CFY35-23 반도체 회로 부품 판매점
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
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 Siemens Semiconductor Group |
GaAs FET
CFY 35
________________________________________________________________________________________________________
Datasheet
* Low noise
* High gain
* For low-noise front end amplifiers
* For DBS down converters
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(tape and reel)
Pin Configuration
1234
CFY 35-20 NA Q62702-F1393 S D S G
CFY 35-23 NB Q62702-F1394
Package 1)
MW-4
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < 53°C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
Value
5
6
-4 ... 0
60
150
-40...+150
180
Thermal resistance
Channel-soldering point 2)
RthChS
540
1) Dimensions see chapter Package Outlines
2) TS is measured on the source 1 lead at the soldering point to the PCB.
Unit
V
V
V
mA
°C
°C
mW
K/W
Siemens Aktiengesellschaft
pg. 1/4
13.02.1996
HL EH PD 21
GaAs FET
CFY 35
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C, unless otherwise specified
Characteristics
Symbol min typ max Unit
Drain-source saturation current
V = 2.5 V, V = 0 V
DS GS
I mA
DSS 10 25 45
Pinch-off voltage
V = 2.5 V I = 1 mA
DS D
V
GS(P)
-0.2
-1.2
-2.5
V
Transconductance
V = 2.5 V I = 10 mA
DS D
g mS
m 20 30 -
Gate leakage current
V = 2.5 V I = 10 mA
DS D
I µA
G - 0.1 2
Noise figure
V = 2.5 V I = 10 mA
DS D
f = 12 GHz
CFY 35-20
CFY 35-23
F
dB
- 1.9 2.0
- 2.2 2.3
Associated gain
V = 2.5 V I = 10 mA
DS D
f = 12 GHz
G
a
dB
8 8.5 -
Typical Common Source Noise Parameters
I = 10 mA
D
V = 2.5 V
DS
Z = 50 Ω
0
f Fmin Ga
Γopt
Rn rn
N
GHz dB dB MAG ANG Ω −
-
2 0.60 17.6 0.82 32 35 0.7 0.08
4 0.83 14.2 0.73 65 25 0.5 0.11
6 1.10 11.8 0.65 105 14 0.28 0.14
8 1.38 10.5 0.60 146 5.5 0.11 0.19
10 1.64 9.4 0.58 -177 3 0.06 0.22
12 1.90 8.5 0.61 -139 10 0.2 0.28
14 2.15 7.9 0.62 -110 26 0.52 0.33
F50Ω
dB
2.35
2.30
2.35
2.55
2.80
3.50
3.95
G(F50 Ω)
dB
12.9
11.2
9.5
7.8
6.5
4.9
3.8
Siemens Aktiengesellschaft
pg. 2/4
13.02.1996
HL EH PD 21
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제조업체: Siemens Semiconductor Group
( siemens )
CFY35-23 amplifier
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[ CFY35-23.PDF ]
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
CFY35-20
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) - Siemens Semiconductor Group
CFY35-23
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) - Siemens Semiconductor Group