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상세설명 | 제조사 |
N-channel MOSFET
MMIS60R580P Datasheet
MMIS60R580P
600V 0.58Ω N-channel MOSFET
Description
MMIS60R580P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.58
3 8 18
Un
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