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Datasheet VB10 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | VB10 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB | New Jersey Semiconductor | diode |
2 | VB10 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB | New Jersey Semiconductor | diode |
3 | VB100 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB | New Jersey Semiconductor | diode |
4 | VB100X | Diode (spec sheet) | American Microsemiconductor | diode |
5 | VB10150S | High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
V10150S, VF10150S, VB10150S, VI10150S
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V10150S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB K
123
VF10150S
PIN 1
PIN 2
PIN 3
TO-262AA | Vishay | rectifier |
VB1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | VB10 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB New Jersey Semiconductor diode | | |
2 | VB10 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB New Jersey Semiconductor diode | | |
3 | VB100 | Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB New Jersey Semiconductor diode | | |
4 | VB100X | Diode (spec sheet) American Microsemiconductor diode | | |
5 | VB10150S | High Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
V10150S, VF10150S, VB10150S, VI10150S
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V10150S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB K
123
VF10150S
PIN 1
PIN 2
PIN 3
TO-262AA Vishay rectifier | | |
6 | VB10150S-M3 | High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB10150S-M3
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.59 V at IF = 5.0 A
TMBS ®
TO-263AB K
A NC
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meet Vishay rectifier | | |
7 | VB10170C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier www.vishay.com
VB10170C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
TMBS ®
TO-263AB
K
2 1
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Mee Vishay rectifier | |
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Número de pieza | Descripción | Fabricantes | |
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