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Datasheet TZS4702 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TZS4702 | Silicon Epitaxial Planar Z-Diodes TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissi |  Vishay Telefunken | diode |
TZS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TZS4678 | Silicon Epitaxial Planar Z-Diodes TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissi Vishay Telefunken diode | | |
| 2 | TZS4679 | Silicon Epitaxial Planar Z-Diodes TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissi Vishay Telefunken diode | | |
| 3 | TZS4680 | Silicon Epitaxial Planar Z-Diodes TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissi Vishay Telefunken diode | | |
| 4 | TZS4681 | Silicon Epitaxial Planar Z-Diodes TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissi Vishay Telefunken diode | | |
| 5 | TZS4682 | Silicon Epitaxial Planar Z-Diodes TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissi Vishay Telefunken diode | | |
| 6 | TZS4683 | Silicon Epitaxial Planar Z-Diodes TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissi Vishay Telefunken diode | | |
| 7 | TZS4684 | Silicon Epitaxial Planar Z-Diodes TZS4678...TZS4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D
Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissi Vishay Telefunken diode | |
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