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Datasheet TK49N65W5 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | TK49N65W5 | MOSFET, Transistor TK49N65W5
MOSFETs Silicon N-Channel MOS (DTMOS)
TK49N65W5
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Fast reverse recovery time: trr = 145 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.051 Ω (typ.) by using Super Junction Structure : DTMOS Easy to con |  Toshiba Semiconductor | mosfet |
TK4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | TK40A06N1 | MOSFET, Transistor TK40A06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK40A06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V Toshiba Semiconductor mosfet | | |
| 2 | TK40A08K3 | Field Effect Transistor TK40A08K3
東芝電界効果トランジスタ シリコンNチャネルMOS形 (U-MOSⅣ)
TK40A08K3
スイッチングレギュレーター用
z z z z オン抵抗が低い。 漏れ電流が低い。 :RDS (ON) = 7.0 mΩ (標準) :IDSS = 10 μA (最大) (VDS = 75 V) 単位: mm
順方向伝達ア� Toshiba Semiconductor transistor | | |
| 3 | TK40A10J1 | Field Effect Transistor TK40A10J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK40A10J1
Switching Regulator Applications
• • • • • Unit: mm Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: Toshiba Semiconductor transistor | | |
| 4 | TK40A10K3 | Field Effect Transistor TK40A10K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK40A10K3
Switching Regulator Application
• • • • Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Toshiba Semiconductor transistor | | |
| 5 | TK40A10N1 | MOSFET, Transistor TK40A10N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK40A10N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V Toshiba Semiconductor mosfet | | |
| 6 | TK40D10J1 | Switching Regulator Applications
TK40D10J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK40D10J1
Switching Regulator Applications
10.0±0.3
Unit: mm
9.5±0.2 A 0.6±0.1 Ф3.65±0.2
• • • • •
Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resista Toshiba Semiconductor regulator | | |
| 7 | TK40E06N1 | MOSFET, Transistor TK40E06N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK40E06N1
1. Applications
• Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V Toshiba Semiconductor mosfet | |
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