DataSheet.es    

Datasheet SW51X Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SW51x14 PIN DIP HIGH SPEED SINEWAVE

Connor-Winfield Corporation
Connor-Winfield Corporation		data


SW5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1SW500Single Pole Single Throw Normally Open

SW500 Single Pole Single Throw Normally Open (Part of the Busbar Series) The SW500 is designed for use in telecommunication and power distribution applications where an uninterrupted load is switched. These contactors are primarily for use with Direct Current loads but can also be used with Alterna
Albright
Albright		data
2SW50CPF06Diode, Rectifier

SAMWIN SW50CPF06 DIODE Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current ■ Designed and qualified according to JEDEC-JESD47 TO-3P 12 3 1. Anode 2. Gathode 3. Anode VR : 620V IF(AV) : 50A VF at IF : 1.5V Genera
SEMIPOWER
SEMIPOWER		diode
3SW50N06N-Channel MOSFET

SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc : 130 W SW50N06 General Description This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MO
Sammwin
Sammwin		mosfet
4SW50N06AN-channel MOSFET

SAMWIN SW50N06A N-channel MOSFET BVDSS : 60V ID : 50A RDS(ON) : 0.023ohm 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.023Ω)@VGS=10V ■ Gate Charge (Typ 36nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 1 2 1 3 1. Gate 2. Drain 3. Source General Des
SAMWIN
SAMWIN		mosfet
5SW50N06TMOSFET, Transistor

SAMWIN SW50N06T N-channel D-PAK/TO-220 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 16.8mΩ)@VGS=10V ■ Gate Charge (Typ 41nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-252 TO-220 1 2 3 12 3 BVDSS : 60V ID : 50A RDS(ON) : 16.8mΩ 2 1. Gate 2. Drain 3. Source Gene
SEMIPOWER
SEMIPOWER		mosfet
6SW50N10MOSFET, Transistor

SAMWIN SW50N10 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max17mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDM
SEMIPOWER
SEMIPOWER		mosfet
7SW5104Infrared remote control transmitter circuit

SW5104 特性 z 八通道按键输入 z 二位用户码选择 z 按键起振节省静态功耗 z 发射状态 LED 指示 z 高 EMC、ESD 抑制能力 z 低功耗 CMOS 技术设计 z 宽工作电压范围 2.0 - 5.0V 应用场合 z 遥控电风扇 z 空气清洁器 z 加湿器 z 遥控玩具 z 近距�
ETC
ETC		data



Esta página es del resultado de búsqueda del SW51X. Si pulsa el resultado de búsqueda de SW51X se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap