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Datasheet SW10N60D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SW10N60D   MOSFET ( Transistor )

SAMWIN SW10N60D N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 23 BVDSS : 600V ID : 10A RDS(ON) : 1.1Ω 2 1. Gate 2. Drain 3. Source General Description This
 SEMIPOWER
SEMIPOWER		 datasheet SW10N60D pdf

SW10N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SW10N65

N-channel MOSFET

SW10N65 N-channel Enhanced mode TO-220F/TO-220 MOSFET Features TO- 220F TO-220  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 40nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: Charge,LED,PC Power 12 3 12 3 1. G
 SAMWIN
SAMWIN		 datasheet pdf - SAMWIN
SW10N60

N-channel MOSFET

SAMWIN SW10N60 N-channel MOSFET BVDSS : 600V ID : 10.0A RDS(ON) : 0.75ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.75Ω)@VGS=10V ■ Gate Charge (Typ 37nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-220 1. Gate 2. Drain 3. So
 SAMWIN
SAMWIN		 datasheet pdf - SAMWIN
SW10N65K

MOSFET ( Transistor )

SAMWIN SW10N65K N-channel TO-220F/TO251N /TO-220 MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.4Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F TO-251N TO-220 1 2 3 1 2 3 1 2 3 General Description 1. G
 SEMIPOWER
SEMIPOWER		 datasheet pdf - SEMIPOWER


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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