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Datasheet SVD50N06D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SVD50N06D   MOSFET ( Transistor )

SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been espe
 Silan Microelectronics
Silan Microelectronics		 datasheet SVD50N06D pdf

SVD50N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SVD50N06T

MOSFET ( Transistor )

SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring ter
 Silan Microelectronics
Silan Microelectronics		 datasheet pdf - Silan Microelectronics
SVD50N06D

MOSFET ( Transistor )

SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring ter
 Silan Microelectronics
Silan Microelectronics		 datasheet pdf - Silan Microelectronics
SVD50N06M

MOSFET ( Transistor )

士兰微电子 SVD50N06T/D/M/MJ 说明书 50A、60V N沟道增强型场效应管 描述 SVD50N06T/D/M/MJ N 沟道增强型高压功率 MOS 场效应 晶体管采用士兰微电子新型平面低压 VDMOS 工艺技术制造。先 进的工艺及条状的原胞设计结构使�
 Silan Microelectronics
Silan Microelectronics		 datasheet pdf - Silan Microelectronics


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Número de pieza Descripción Fabricantes PDF
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