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Datasheet SVD4N60F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | SVD4N60F | 600V N-Channel MOSFET SVD4N60D/F(G)/T_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring termina |
Silan |
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1 | SVD4N60FG | 600V N-Channel MOSFET SVD4N60D/F(G)/T_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring termina |
Silan |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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