Datasheet STGP10NB60S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	STGP10NB60S	N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT ® STGP10NB60S N-CHANNEL 10A - 600V TO-220 PowerMESH™ IGBT TYPE STGP10NB60S s V CES 600 V V CE(sat ) < 1.7 V IC 10 A s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 1 2 DESCRIPTION Using the latest high	ST Microelectronics	igbt
2	STGP10NB60S	N-CHANNEL IGBT STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK PowerMESH™ IGBT Table 1: General Features TYPE STGP10NB60S STGP10NB60SFP STGB10NB60S s Figure 1: Package IC @100°C 10 A 10 A 10 A 1 2 VCES 600 V 600 V 600 V VCE(sat) (Max) @25°C < 1.7 V <	ST Microelectronics	igbt
3	STGP10NB60SD	N-CHANNEL IGBT STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH™ IGBT General features Type STGP10NB60SD ■ ■ VCES 600V VCE(sat) (Max)@ 25°C < 1.7V IC @100°C 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) TO-220 3 1 2 Description Using the latest hig	ST Microelectronics	igbt
4	STGP10NB60SDFP	N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT STGP10NB60SDFP N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT TYPE STGP10NB60SDFP s VCES 600 VCE(sat) < 1.8 V IC 10 A s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 1 2 DESCRIPTION Using the latest high voltage tec	ST Microelectronics	igbt
5	STGP10NB60SFP	N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT STGP10NB60SFP N-CHANNEL 10A - 600V - TO-220FP PowerMesh™ IGBT TYPE STGP10NB60SFP s VCES 600 VCE(sat) < 1.7 V IC 10 A s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 1 2 DESCRIPTION Using the latest high voltage techn	ST Microelectronics	igbt

STG Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	STG2017	Dual N-Channel E nhancement Mode Field Effect Transistor S T G 2017 S amHop Microelectronics C orp. May,18 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 28 @ V G S = 2.5V	SamHop Microelectronics	transistor
2	STG2454	Dual N-Channel Enhancement Mode Field Effect Transistor Gr Pr STG2454 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 24V ID 7A R DS(ON) (m Ω) Max 17 @ VGS=4.0V 29 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD	SamHop Microelectronics	transistor
3	STG2507	Dual P-Channel E nhancement Mode Field Effect Transistor S T G 2507 S amHop Microelectronics C orp. May,10 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( mW ) Max ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON ). 17 @ V G S = -4.5V 25 @ V G S =	SamHop Microelectronics	transistor
4	STG3155	Low voltage 0.5 Ohm Max single SPDT switch STG3155 Low voltage 0.5Ω Max single SPDT switch with break-before-make feature Features ■ High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 0.5Ω (TA = 25ºC) a	ST Microelectronics	data
5	STG3157	Low voltage low on-resistance SPDT switch STG3157 Low voltage low on-resistance SPDT switch with break-before-make feature Features ■ High speed: – tPD = 0.3 ns (max) at VCC = 4.5 V – tPD = 0.8 ns (max) at VCC = 3.0 V – tPD = 1.2 ns (max) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 1 µA (max) at TA = 85 °C ■ Low o	ST Microelectronics	data
6	STG3159	single SPDT switch STG3159 Low voltage 1Ω max single SPDT switch with break-before-make feature Features ■ High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 1.	STMicroelectronics	data
7	STG3220	Low voltage high bandwidth dual SPDT switch STG3220 Low voltage high bandwidth dual SPDT switch Features ■ ■ Ultra low power dissipation: – ICC = 1 μA (max.) at TA = 85 °C Low "ON" resistance: – RON = 4.8 Ω (TA = 25 ºC) at VCC = 4.3 V – RON = 5.9 Ω (TA = 25 ºC) at VCC = 3.0 V Wide operating voltage range:	ST Microelectronics	data

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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