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Datasheet STD9N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | STD9N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STD9N10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE ST D9N10
s s s s s s s s
V DSS 100 V
R DS(on) < 0.27 Ω
ID 9 A
s
s
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT C |
 ST Microelectronics |
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| 2 | STD9N10-1 | N-CHANNEL POWER MOS TRANSISTOR
N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR
Table 1. General Features
Type STD9N10 STD9N10-1 VDSS 100 V 100 V RDS(on) < 0.27 Ω < 0.27 Ω ID 9A 9A
STD9N10 STD9N10-1
Figure 1. Package
FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.23 Ω
■ ■ ■ ■ ■ ■ |
ST Microelectronics |
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| 1 | STD9N10L | N-CHANNEL POWER MOS TRANSISTOR
STD9N10L
N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR
TYPE STD9N10L
s s s s s s s s
V DSS 100 V
R DS(on) < 0.27 Ω
ID 9A
s
TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABIL |
ST Microelectronics |
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