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Datasheet SSM6P49NU Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SSM6P49NU   Field Effect Transistor

SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications • • 1.8V drive Low ON-resistance: RDS(on) = 157 mΩ (max) (@VGS = -1.8 V) RDS(on) = 76 mΩ (max) (@VGS = -2.5 V) RDS(on) = 56 mΩ (max) (@VGS = -4.5 V) RDS(on) = 45 mΩ (max)
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet SSM6P49NU pdf

SSM6P4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SSM6P49NU

Field Effect Transistor

SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications • • 1.8V drive Low ON-resistance: RDS(on) = 157 mΩ (max) (@VGS = -1.8 V) RDS(on) = 76 mΩ (max) (@VGS = -2.5 V) RDS(on) = 56 mΩ (max) (@VGS = -4.5 V) RDS(
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
SSM6P40TU

Field Effect Transistor

SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • • • 4.0 V drive P-ch, 2-in-1 Low ON-resistance: Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 1 2 3 6 5 4 0.166±0.05 Ron
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
SSM6P47NU

Field Effect Transistor

SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications • • 1.5V drive Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS =
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
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