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Datasheet SSM6N57NU Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SSM6N57NU   MOSFETs

SSM6N57NU MOSFETs Silicon N-Channel MOS SSM6N57NU 1. Applications • • Power Management Switches DC-DC Converters 2. Features (1) (2) 1.8 V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet SSM6N57NU pdf

SSM6N5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SSM6N58NU

MOSFETs

SSM6N58NU MOSFETs Silicon N-Channel MOS SSM6N58NU 1. Applications • • Power Management Switches DC-DC Converters 2. Features (1) (2) 1.8-V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
SSM6N57NU

MOSFETs

SSM6N57NU MOSFETs Silicon N-Channel MOS SSM6N57NU 1. Applications • • Power Management Switches DC-DC Converters 2. Features (1) (2) 1.8 V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RD
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
SSM6N55NU

MOSFETs

SSM6N55NU MOSFETs Silicon N-Channel MOS SSM6N55NU 1. Applications • • Power Management Switches DC-DC Converters 2. Features (1) (2) 4.5V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V) 3. Pa
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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