Datasheet SI6963DQ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI6963DQ	Dual P-Channel 2.5V Specified PowerTrench MOSFET Si6963DQ April 2001 Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range	Fairchild Semiconductor

SI696 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI6968BEDQ	Dual N-Channel 2.5-V (G-S) MOSFET Common Drain Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 D TrenchFETr Power MOSFET D ESD Protected: 3000 V ID (A) 6.5 5.5 rDS(on) (W) 0.022 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V D D TSSOP-	Vishay Siliconix
SI6966DQ	Dual N-Channel 2.5V Specified PowerTrench MOSFET SI6966DQ April 2001 SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applicati	Fairchild Semiconductor
SI6968BEDQ_RC	R-C Thermal Model Parameters Si6968BEDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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