Datasheet SI2331DS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI2331DS	P-Channel 1.8-V (G-S) MOSFET SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Cha	Vishay Siliconix

SI233 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI2333DS	P-Channel 12-V (D-S) MOSFET Datasheet.es SPICE Device Model Si2333DS Vishay Siliconix P-Channel 12-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C T	Vishay Siliconix
SI2333CDS	P-Channel 12-V (D-S) MOSFET Datasheet.es Si2333CDS Vishay Siliconix P-Channel 12-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V - 12 0.045 at VGS = - 2.5 V 0.059 at VGS = - 1.8 V ID (A)a - 5.1 - 4.5 - 3.9 9 nC Qg (Typ.) FEATURES • TrenchFET® Power MOSFET APPL	Vishay Siliconix
SI2338DS	N-Channel 30 V (D-S) MOSFET Datasheet.es New Product Si2338DS Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.028 at VGS = 10 V 0.033 at VGS = 4.5 V SOT-23 ID (A)a, e 6 Qg (Typ.) 4.2 nC 6 • Halogen-free According to IEC 61249-2-21 Definition	Vishay Siliconix

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