Datasheet SI2304DDS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI2304DDS	N-Channel 30V (D-S) MOSFET New Product N-Channel 30-V (D-S) MOSFET Si2304DDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.060 at VGS = 10 V 30 0.075 at VGS = 4.5 V ID (A)a 3.6 3.6 Qg (Typ.) 2.1 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Test	Vishay

SI2304 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI2304	N-channel enhancement mode field-effect transistor SI2304DS N-channel enhancement mode ﬁeld-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. 2. Featur	NXP Semiconductors
SI2304DS	N-channel enhancement mode field-effect transistor SI2304DS N-channel enhancement mode ﬁeld-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. 2. Featur	NXP Semiconductors
SI2304BDS	N-Channel 30-V (D-S) MOSFET N-Channel 30 V (D-S) MOSFET Si2304BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V ID (A) 3.2 2.6 Qg (Typ.) 2.6 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg	Vishay

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Número de pieza	Descripción	Fabricantes	PDF
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