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Datasheet SI2302DS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | SI2302DS | N-Channel MOSFET SMD Type
N-Channel Enhancement MOSFET SI2302DS (KI2302DS)
■ Features
● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
G1 S2
3D
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
MOSF |
 Kexin |
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| 3 | SI2302DS | N-channel enhancement mode field-effect transistor SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001
M3D088
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23.
2. Features
s s s s Trench |
 NXP Semiconductors |
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| 2 | SI2302DS | N-Channel MOSFET Data Sheet
FEATURES
Input voltage: 4.5 V to 20 V Integrated 44 mΩ high-side MOSFET 0.6 V ± 1% reference voltage over temperature Continuous output current: 6 A Programmable switching frequency: 250 kHz to 1.4 MHz Synchronizes to external clock: 250 kHz to 1.4 MHz 180° out-of-phase synchronization |
 Vishay |
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| 1 | SI2302DS-HF | N-Channel MOSFET SMD Type
N-Channel MOSFET SI2302DS-HF (KI2302DS-HF)
■ Features
● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A ● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0. |
Kexin |
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