Datasheet SGA-9189Z Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SGA-9189Z	Medium Power Discrete SiGe Transistor Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is	Sirenza Microdevices

SGA-91 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SGA-9189Z	Medium Power Discrete SiGe Transistor Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) proce	Sirenza Microdevices
SGA-9189	Silicon Germanium HBT Amplifier Preliminary Preliminary Product Description Sirenza Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bip	ETC
SGA-9189	Reliability Qualification Report Reliability Qualification Report SGA-9189 Products Qualified by Similarity SGA-9289 March, 2001 522 Almanor Ave., Sunnyvale, Ca 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com SGA-9189 Reliability Qualification Report Introduction Stanford Microdevices’ SGA-9189 i	Stanford Microdevices

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Número de pieza	Descripción	Fabricantes	PDF
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