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Datasheet RQJ0603LGDQA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | RQJ0603LGDQA | Silicon P-Channel MOS FET RQJ0603LGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A)
• Low drive current • High speed switching • 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “LG |
 Renesas |
 |
| 1 | RQJ0603LGDQA | Silicon P Channel MOS FET Power Switching RQJ0603LGDQA
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 158 mΩ typ (VGS = –10 V, ID = –0.9 A)
• Low drive current • High speed switching • 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “LG |
Renesas |
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