Datasheet RQJ0306FQDQS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	RQJ0306FQDQS	Silicon P-Channel MOS FET RQJ0306FQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Mar	Renesas	data

RQJ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	RQJ0201UGDQA	Silicon P-Channel MOS FET RQJ0201UGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 53 mΩ typ (VGS = –4.5 V, ID = –1.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “UG�	Renesas	data
2	RQJ0202VGDQA	Silicon P Channel MOS FET Power Switching Preliminary Datasheet RQJ0202VGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.5 V, ID = –1.4 A) • Low drive current • High speed switching • 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014 Outline RENESAS Package code: P	Renesas	data
3	RQJ0203WGDQA	Silicon P-Channel MOS FET RQJ0203WGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 142 mΩ typ (VGS = –4.5 V, ID = –1.1 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “WG	Renesas	data
4	RQJ0204XGDQA	Silicon P-Channel MOS FET RQJ0204XGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “XG	Renesas	data
5	RQJ0301HGDQS	Silicon P-Channel MOS FET RQJ0301HGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is	Renesas	data
6	RQJ0302NGDQA	Silicon P-Channel MOS FET RQJ0302NGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “NG�	Renesas	data
7	RQJ0303PGDQA	P-Channel MOSFE, Transistor Preliminary Datasheet RQJ0303PGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching • 4.5 V gate drive R07DS0295EJ0600 Rev.6.00 Jan 10, 2014 Outline RENESAS Package code: PL	Renesas	data

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Número de pieza	Descripción	Fabricantes	PDF
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