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Datasheet RJL5014DPK Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RJL5014DPK | Silicon N Channel MOS FET High Speed Power Switching
RJL5014DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1798-0100 Rev.1.00 Jun 30, 2009
Features
• • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P | Renesas Technology | data |
RJL Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJL-001 | Single 10/100 BASE-TX Filtered Connector Module
NUMBER : RD-SDRJL-001 DATE :2003/08/13 -CL(REV:3)
Single 10/100 BASE-TX Filtered Connector Module MODEL NO. : RJL-001
Features
Fully shielded magnetics protect data from internally generated digital noise Reduces the overall length of the signal path for improved common mode pe Taimag connector | | |
2 | RJL5012DPE | N-Channel Power MOSFET, Transistor Preliminary Datasheet
RJL5012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
R07DS0435EJ0200 (Previous: REJ03G17 Renesas mosfet | | |
3 | RJL5012DPP | Silicon N Channel MOS FET RJL5012DPP
Silicon N Channel MOS FET High Speed Power Switching
Features
• Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN)
1 23
G
Absolute Maximum Ratings
Item
Symbol
Drai Renesas data | | |
4 | RJL5012DPP-M0 | Silicon N Channel MOS FET RJL5012DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
• Built-in fast recovery diode • Low on-resistance
RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AF-A (Package name: T Renesas data | | |
5 | RJL5013DPE | N-Channel Power MOSFET, Transistor Preliminary Datasheet
RJL5013DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching
R07DS0359EJ0200 (Previous: REJ03G1755- Renesas mosfet | | |
6 | RJL5013DPP-E0 | High Speed Power Switching MOS FET RJL5013DPP-E0
500 V - 14 A - MOS FET High Speed Power Switching
Features
• Built-in fast recovery diode • Low on-resistance
RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0003AG-A (Package name: TO-2 Renesas data | | |
7 | RJL5014DPK | Silicon N Channel MOS FET High Speed Power Switching
RJL5014DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1798-0100 Rev.1.00 Jun 30, 2009
Features
• • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P Renesas Technology data | |
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Número de pieza | Descripción | Fabricantes | |
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