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Datasheet RDN080N25 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RDN080N25 | Transistors Transistors
Switching (250V, 8A)
RDN080N25
RDN080N25
zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
zApplication Switching
zStructure Silicon N-channel MOS FET
zExternal dimensions (Units : mm)
TO-220FN
10.0
+0.3 −0.1
3.2� |  ROHM Semiconductor | transistor |
RDN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RDN050N20 | Switching (200V/ 5A) RDN050N20
Transistors
Switching (200V, 5A)
RDN050N20
!Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. !External dimensions (Units : mm)
TO-220FN
+0.3 10.0 − 0.1 0.3 4.5 + −0.1
3.2±0.2
2.8 −0.1
+0.2
0.4 15.0 + −0.2
12.0  ETC data | | |
| 2 | RDN050N20 | 10V Drive Nch MOS FET Transistors
10V Drive Nch MOS FET
RDN050N20
RDN050N20
zStructure Silicon N-channel MOS FET
zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
zApplication Switching
zExternal dimensions (Unit : mm)
TO-220FN
10.0 φ3.2
4.5 2.8
15 ROHM Semiconductor data | | |
| 3 | RDN080N25 | Transistors Transistors
Switching (250V, 8A)
RDN080N25
RDN080N25
zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
zApplication Switching
zStructure Silicon N-channel MOS FET
zExternal dimensions (Units : mm)
TO-220FN
10.0
+0.3 −0.1
3.2� ROHM Semiconductor transistor | | |
| 4 | RDN100N20 | Switching (200V/ 10A) RDN100N20
Transistors
Switching (200V, 10A)
RDN100N20
!Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. !External dimensions (Unit : mm)
TO-220FN
+0.3 10.0 − 0.1 0.3 4.5 + −0.1
3.2±0.2
2.8 −0.1
+0.2
0.4 15.0 + −0.2
12.0 ROHM Semiconductor data | | |
| 5 | RDN120N25 | Switching RDN120N25
Transistors
Switching (250V, 12A)
RDN120N25
zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. zExternal dimensions (Unit : mm)
TO-220FN
+0.3 10.0 − 0.1 0.3 4.5 + −0.1
3.2±0.2
2.8 −0.1
+0.2
0.4 ROHM Semiconductor data | | |
| 6 | RDN150N20 | Switching RDN150N20
Transistors
Switching (200V, 15A)
RDN150N20
!Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. !External dimensions (Unit : mm)
TO-220FN
+0.3 10.0 − 0.1 0.3 4.5 + −0.1
3.2±0.2
2.8 −0.1
+0.2
0.4 ROHM Semiconductor data | |
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