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Datasheet PJ6A6.8FU Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJ6A6.8FU | QUAD ARRAY FOR ESD PROTECTION PJ6A6.8FU
QUAD ARRAY FOR ESD PROTECTION FEATURES
• Low Leakage < 1µA@5Volts • Breakdown Voltage : 6.4-7.2 Volt@5mA • Low Capacitance (40pF typical) • ESD Protection Meeting IEC61000-4-2 Level 4 • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : SOT-363, Plastic Ter |  Pan Jit International | data |
PJ6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJ6.6K48A | POWER SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR PJ6.6K48A
POWER SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
This High Energy Transient Voltage Suppressor comes in an Industry Standard D2PAK package and is intended for Load Dump Protection in Automotive Circuitry, suitable for the PowerNET 42V Systems, and also for any Industri Pan Jit International tvs-diode | | |
| 2 | PJ614DA | Dual N-Channel Enhancement Mode MOSFET PJ614DA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 12.5mΩ @VGS = 4.5V
ID 9A
J-Lead
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±10
Continuo  UNIKC mosfet | | |
| 3 | PJ6676 | 25V N-Channel Enhancement Mode MOSFET
PJ6676
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@15A=8mΩ • RDS(ON), [email protected],IDS@13A=12mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Cha Pan Jit International mosfet | | |
| 4 | PJ6680 | 25V N-Channel Enhancement Mode MOSFET
PJ6680
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@12A=10mΩ • RDS(ON), [email protected],IDS@10A=18mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Ch Pan Jit International mosfet | | |
| 5 | PJ6694 | 25V N-Channel Enhancement Mode MOSFET
PJ6694
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@12A=12mΩ • RDS(ON), [email protected],IDS@10A=22mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Ch Pan Jit International mosfet | | |
| 6 | PJ6A6.8FU | QUAD ARRAY FOR ESD PROTECTION PJ6A6.8FU
QUAD ARRAY FOR ESD PROTECTION FEATURES
• Low Leakage < 1µA@5Volts • Breakdown Voltage : 6.4-7.2 Volt@5mA • Low Capacitance (40pF typical) • ESD Protection Meeting IEC61000-4-2 Level 4 • In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : SOT-363, Plastic Ter Pan Jit International data | |
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