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Datasheet P121 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P121 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
P121
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and ou |  Polyfet RF Devices | transistor |
| 2 | P121 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical de |  International Rectifier | data |
| 3 | P1210BK | N-Channel Enhancement Mode MOSFET P1210BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
12mΩ @VGS = 10V
ID 40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±20
Continuous |  UNIKC | mosfet |
| 4 | P1210BVA | N-Channel Enhancement Mode MOSFET P1210BVA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
12mΩ @VGS = 10V
ID 8.7A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous | UNIKC | mosfet |
| 5 | P1212AT | N-Channel Enhancement Mode MOSFET P1212AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
120V
12mΩ @VGS = 10V
ID 75A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Curre | UNIKC | mosfet |
P12 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P1200A | Silicon Rectifier Diodes 62.5 ±0.5 7,5 ±0.1
P1200A ... P1200G
Version 2012-10-01
Ø 8 ±0.1 Type
Ø 1.2 ±0.05 Dimensions - Maße [mm]
P1200A ... P1200G
Silicon Rectifier Diodes Silizium-Gleichrichterdioden
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoff  Diotec rectifier | | |
| 2 | P1200A | Standard silicon rectifier diodes P 1200 A ... P 1200 S
Axial lead diode
Standard silicon rectifier diodes
.3
- 7 - A - 2 - B - 8 - C - - 1
=
>
4
>
>
,
1,
4
>
>
,
#== #
( - " % -
-
#=1 #
( - " % -
-
 Semikron rectifier | | |
| 3 | P1200B | Silicon Rectifier Diodes 62.5 ±0.5 7,5 ±0.1
P1200A ... P1200G
Version 2012-10-01
Ø 8 ±0.1 Type
Ø 1.2 ±0.05 Dimensions - Maße [mm]
P1200A ... P1200G
Silicon Rectifier Diodes Silizium-Gleichrichterdioden
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoff Diotec rectifier | | |
| 4 | P1200B | Standard silicon rectifier diodes P 1200 A ... P 1200 S
Axial lead diode
Standard silicon rectifier diodes
.3
- 7 - A - 2 - B - 8 - C - - 1
=
>
4
>
>
,
1,
4
>
>
,
#== #
( - " % -
-
#=1 #
( - " % -
-
Semikron rectifier | | |
| 5 | P1200D | Silicon Rectifier Diodes 62.5 ±0.5 7,5 ±0.1
P1200A ... P1200G
Version 2012-10-01
Ø 8 ±0.1 Type
Ø 1.2 ±0.05 Dimensions - Maße [mm]
P1200A ... P1200G
Silicon Rectifier Diodes Silizium-Gleichrichterdioden
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoff Diotec rectifier | | |
| 6 | P1200D | Standard silicon rectifier diodes P 1200 A ... P 1200 S
Axial lead diode
Standard silicon rectifier diodes
.3
- 7 - A - 2 - B - 8 - C - - 1
=
>
4
>
>
,
1,
4
>
>
,
#== #
( - " % -
-
#=1 #
( - " % -
-
Semikron rectifier | | |
| 7 | P1200G | Silicon Rectifier Diodes 62.5 ±0.5 7,5 ±0.1
P1200A ... P1200G
Version 2012-10-01
Ø 8 ±0.1 Type
Ø 1.2 ±0.05 Dimensions - Maße [mm]
P1200A ... P1200G
Silicon Rectifier Diodes Silizium-Gleichrichterdioden
Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoff Diotec rectifier | |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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