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Datasheet P1004B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | P1004B | N-Channel Enhancement Mode MOSFET P1004BS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 11mΩ @VGS = 10V
ID 53A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Curren |  UNIKC | mosfet |
| 2 | P1004BD | N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode Field Effect Transistor
P1004BD
TO-252 Halogen-Free & Lead-Free
D
PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ ID 55A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Ga |  Niko-Sem | transistor |
| 3 | P1004BD | N-Channel Enhancement Mode MOSFET P1004BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 40V RDS(ON) 10mΩ @VGS = 10V ID 55A
TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pu | UNIKC | mosfet |
| 4 | P1004BS | N-Channel Enhancement Mode MOSFET P1004BS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 11mΩ @VGS = 10V
ID 53A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Curren | UNIKC | mosfet |
P10 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P100 | PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM, V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical de  International Rectifier data | | |
| 2 | P1000A | Silicon Rectifiers P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassif  Diotec Semiconductor rectifier | | |
| 3 | P1000A | (P1000x) Standard silicon rectifier diodes P 1000 A....P 1000 S
0,
:
;
4
;
;
.
+.
4
;
;
.
;
;
,
26 7 $ 8 2: 7 $ 8 2:: 7 $ 8 $ $ $ $ $ $ $ $
= ;
.
Axial lead diode Standard silicon rectifier diodes
P 1000 A....P 1000 S Forward Current: 10 A Re  Semikron International rectifier | | |
| 4 | P1000B | Silicon Rectifiers P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassif Diotec Semiconductor rectifier | | |
| 5 | P1000B | (P1000x) Standard silicon rectifier diodes P 1000 A....P 1000 S
0,
:
;
4
;
;
.
+.
4
;
;
.
;
;
,
26 7 $ 8 2: 7 $ 8 2:: 7 $ 8 $ $ $ $ $ $ $ $
= ;
.
Axial lead diode Standard silicon rectifier diodes
P 1000 A....P 1000 S Forward Current: 10 A Re Semikron International rectifier | | |
| 6 | P1000D | Silicon Rectifiers P 1000 A ... P 1000 M Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassif Diotec Semiconductor rectifier | | |
| 7 | P1000D | (P1000x) Standard silicon rectifier diodes P 1000 A....P 1000 S
0,
:
;
4
;
;
.
+.
4
;
;
.
;
;
,
26 7 $ 8 2: 7 $ 8 2:: 7 $ 8 $ $ $ $ $ $ $ $
= ;
.
Axial lead diode Standard silicon rectifier diodes
P 1000 A....P 1000 S Forward Current: 10 A Re Semikron International rectifier | |
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