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Datasheet NE461M02 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NE461M02 | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
HIGH COLLECTOR CURRENT: 250 mA MAX • NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) • HIGH OUTPUT POWER AT 1 dB COMPRESSION: 27 dBm TYP at 1 GHz • HIGH IP3: 37 dBm TYP at 1 GHz •
NE461 |  NEC | transistor |
NE4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NE41137 | N-Channel GaAs Dual Gate MES FET California Eastern Laboratories gate | | |
| 2 | NE416 | NPN MEDIUM POWER UHF-VHF TRANSISTOR NEC transistor | | |
| 3 | NE4210M01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain NEC amplifier | | |
| 4 | NE4210M01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain NEC amplifier | | |
| 5 | NE4210S01 | X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC amplifier | | |
| 6 | NE4210S01-T1 | X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC amplifier | | |
| 7 | NE4210S01-T1B | X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC amplifier | |
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