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Datasheet NE46100 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NE46100 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR
FEATURES
• HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc
Output Power, POUT (dBm)
30.0 28.0
NE46100 NE46134
NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA
12.5 V 10 V 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 5 10 15 20 25 5V
|  NEC | transistor |
NE4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NE41137 | N-Channel GaAs Dual Gate MES FET California Eastern Laboratories gate | | |
| 2 | NE416 | NPN MEDIUM POWER UHF-VHF TRANSISTOR NEC transistor | | |
| 3 | NE4210M01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain NEC amplifier | | |
| 4 | NE4210M01-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PRELIMINARY DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210M01
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain NEC amplifier | | |
| 5 | NE4210S01 | X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC amplifier | | |
| 6 | NE4210S01-T1 | X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC amplifier | | |
| 7 | NE4210S01-T1B | X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE4210S01
X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC amplifier | |
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