DataSheet.es    


Datasheet NE3512S02 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NE3512S02HETERO JUNCTION FIELD EFFECT TRANSISTOR

HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • C to Ku-
CEL
CEL		transistor


NE3 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NE3002-VA10ANear edge thermal printhead (300 dots / inch)

Printheads Near edge thermal printhead (300 dots / inch) NE3002-VA10A The NE3002-VA10A is a near edge thin-film thermal printhead, where the printing medium passes straight through at printing speeds up to 8 inch / second. It is suited for high-speed label printers. FApplications Bar code printers
ROHM Semiconductor
ROHM Semiconductor		data
2NE3004-VA10ANear edge thermal printhead (300 dots / inch)

Printheads Near edge thermal printhead (300 dots / inch) NE3004-VA10A The NE3004-VA10A is a near edge thin-film thermal printhead where the printing medium passes straight through. This printhead is capable of printing speeds up to 8 inch / second and is suited for label printers. FApplications Bar
ROHM Semiconductor
ROHM Semiconductor		data
3NE321000C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable
NEC
NEC		amplifier
4NE321000ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11 • GATE LENGTH: ≤0.2 µm
CEL
CEL		data
5NE3210S01X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable
NEC
NEC		data
6NE3210S01-T1X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable
NEC
NEC		data
7NE3210S01-T1BX to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable
NEC
NEC		data



Esta página es del resultado de búsqueda del NE3512S02. Si pulsa el resultado de búsqueda de NE3512S02 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap