Datasheet MTN4N60E3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTN4N60E3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C408E3 Issued Date : 2010.12.06 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4N60E3 BVDSS : 600V RDS(ON) : 2.1Ω(typ.) ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best	CYStech Electronics

MTN4N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTN4N65F3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C797F3 Issued Date : 2015.03.06 Revised Date : Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFET MTN4N65F3 BVDSS : 650V RDS(ON) : 3Ω (typ.) ID : 4A Features • Low On Resistance • Simple Drive Requirement • Fast Switching Cha	Cystech Electonics
MTN4N65CJ3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C080J3 Issued Date : 2016.06.27 Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N65CJ3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C Features RDS(ON)@VGS=10V, ID=2A • Low On Resistance • Simple Driv	Cystech Electonics
MTN4N65J3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C797J3 Issued Date : 2011.09.14 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N65J3 BVDSS : 650V RDS(ON) : 3.0Ω(typ.) ID : 4A Features • Low On Resistance • Simple Drive Requirement • Low Gat	Cystech Electonics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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