Datasheet MTD6N10E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTD6N10E	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanch	Motorola Semiconductors

MTD6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTD6N20E	Power MOSFET 6 Amps MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a f	ON Semiconductor
MTD6N10E	TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high en	Motorola Semiconductors
MTD6N10	TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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