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Datasheet MTB3N100E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTB3N100E | High Energy Power FET MTB3N100E
Designer’s™ Data Sheet
TMOS E−FET.™
High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
http://onsemi.com
TMOS POWER FET
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it t |
 ON Semiconductor |
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| 1 | MTB3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB3N100E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a large |
 Motorola Semiconductors |
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