Datasheet MSN05B2K Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MSN05B2K	N-Channel Enhancement Mode Power MOS FET MSN05B2K 55V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● E	MORESEMI

MSN05 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MSN05M2	N-Channel Enhancement Mode Power MOS FET MSN05M2 50V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: rel	MORESEMI
MSN05B2K	N-Channel Enhancement Mode Power MOS FET MSN05B2K 55V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity	MORESEMI

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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