Datasheet MRF9080SR3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF9080SR3	RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these de	Motorola Semiconductors

MRF9080 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF9080SR3	RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance www.datashe	Motorola Semiconductors
MRF9080R3	RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9080/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance www.datashe	Motorola Semiconductors
MRF9080LSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal	Freescale Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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