Datasheet MRF9002NR2 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF9002NR2	RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and	Freescale Semiconductor

MRF9002 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF9002R2	RF Power Field Effect Transistor Array MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET N - Channel Enhancement	Motorola Inc
MRF9002NR2	RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz	Freescale Semiconductor

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