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Datasheet MRF8S18120HSR3 Equivalent ( PDF ) |
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| 1 | MRF8S18120HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data
Document Number: MRF8S18120H Rev. 0, 9/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C f |
 Freescale Semiconductor |
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MRF8S18120H Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| MRF8S18120HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Freescale Semiconductor |
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| MRF8S18120HSR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Freescale Semiconductor |
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