Datasheet MRF6VP2600HR6 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF6VP2600HR6	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor ‘ Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadca	Freescale Semiconductor

MRF6VP2600 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF6VP2600HR6	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor ‘ Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitabl	Freescale Semiconductor

Esta página es del resultado de búsqueda del MRF6VP2600HR6. Si pulsa el resultado de búsqueda de MRF6VP2600HR6 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap