Datasheet MRF6S27050HR3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF6S27050HR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, B	Freescale Semiconductor

MRF6S27050 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF6S27050HSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable	Freescale Semiconductor
MRF6S27050HSR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable	Freescale Semiconductor
MRF6S27050HR3	RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable	Freescale Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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