|
|
Datasheet MRF21125S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | MRF21125S | RF POWER FIELD EFFECT TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF21125/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA |
Motorola Semiconductors |
|
1 | MRF21125SR3 | RF POWER FIELD EFFECT TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF21125/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA |
Motorola Semiconductors |
Esta página es del resultado de búsqueda del MRF21125S. Si pulsa el resultado de búsqueda de MRF21125S se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |