Datasheet MRF19120S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MRF19120S	RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs MRF19120 MRF19120S 1990 MHz, 120 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs Designed fo	Motorola Semiconductors

MRF191 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MRF19125	RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies fr	Motorola Semiconductors
MRF19125SR3	RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies fr	Motorola Semiconductors
MRF19125S	RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies fr	Motorola Semiconductors

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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