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Datasheet MLN1030S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MLN1030S | NPN SILICON RF POWER TRANSISTOR MLN1030S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030S is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• • • Omnigold™ Metalization System
B
D S G
S
D
C J
E
I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.250 A 40 V 28 V 3.5 V 7.0 W @ TC = 25 O |  Advanced | transistor |
| 2 | MLN1030SL | NPN SILICON RF POWER TRANSISTOR MLN1030SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030SL is Designed for
PACKAGE STYLE .280 4L PILL
A
FEATURES:
• • • Omnigold™ Metalization System
D
S
ØB
G S
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
ØC
0.250 A 40 V 28 V 3.5 V 7.0 W @ TC = 25 OC -65 | Advanced | transistor |
| 3 | MLN1030SS | NPN SILICON RF POWER TRANSISTOR MLN1030SS
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030SS is Designed for
PACKAGE STYLE .205 4L STUD
D
A
FEATURES:
• • • Omnigold™ Metalization System
B G
C
E F
H
#8-32UNC
MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG θ JC
O
J
10 A 60 V 35 V 140 W @ TC = 25 OC -65 C to | Advanced | transistor |
MLN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MLN | Multiline Transient Voltage Surge Suppressor Next
Previous
Surface Mount Varistors
Multiline Transient Voltage Surge Suppressor
MLN SurgeArray™ Suppressor
The MLN SurgeArray™ Suppressor is designed to help protect components from transient voltages that exist at the circuit board level. This device provides four independent suppressors  Littelfuse tvs-diode | | |
| 2 | MLN1027F | NPN SILICON RF POWER TRANSISTOR MLN1027F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG DESCRIPTION:
ØD A
The ASI MLN1027F is Designed for
B
C E
.060 x 45° CHAMFER
FEATURES:
• • • Omnigold™ Metalization System
DIM L
G
H J
F I K M NP
MINIMUM
inches / mm
MAXIMUM
inches / mm
MAXIMUM RATINGS
IC VCE PDI Advanced transistor | | |
| 3 | MLN1027S | NPN SILICON RF POWER TRANSISTOR MLN1027S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1027S is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• • • Omnigold™ Metalization System
B
D
C J
E
I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC
O
F G H K DIM A B C D E F G H I J K .175 / 4.45 .2 Advanced transistor | | |
| 4 | MLN1027SL | NPN SILICON RF POWER TRANSISTOR MLN1027SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1027SL is Designed for
PACKAGE STYLE .280 4L PILL
A
FEATURES:
• • • Omnigold™ Metalization System
S D S G
ØB
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.250 A
D
ØC
40 V 28 V 3.5 V 7.0 W @ TC = 25 OC -65 O Advanced transistor | | |
| 5 | MLN1027SS | NPN SILICON RF POWER TRANSISTOR MLN1027SS
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1027SS is Designed for
PACKAGE STYLE .205 4L STUD
D
A
FEATURES:
• • • Omnigold™ Metalization System
B G
C
E F
H
#8-32UNC
J
MAXIMUM RATINGS
IC VCB VCE PDISS TJ TSTG θ JC 10 A
DIM MINIMUM
inches / mm
MAXIMUM
inches / Advanced transistor | | |
| 6 | MLN1030F | NPN SILICON RF POWER TRANSISTOR MLN1030F
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .250 2L FLG
A
DESCRIPTION:
The ASI MLN1030F is Designed for
B C E
ØD .060 x 45° CHAMFER
FEATURES:
• • • Omnigold™ Metalization System
G L
H J
F I K P MN
DIM A
MINIMUM
inches / mm
MAXIMUM
inches / mm
.028 / 0.71 .740 / 18.80 Advanced transistor | | |
| 7 | MLN1030S | NPN SILICON RF POWER TRANSISTOR MLN1030S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030S is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
• • • Omnigold™ Metalization System
B
D S G
S
D
C J
E
I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.250 A 40 V 28 V 3.5 V 7.0 W @ TC = 25 O Advanced transistor | |
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