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Datasheet MJ2955 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | MJ2955 | Complementary Power Transistors 2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
• Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base 2. |
 Multicomp |
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| 12 | MJ2955 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) MJ2955
AUDIO POWER AMPLIFIER DC TO DC CONVERTER
PNP
PLANAR SILICON TRANSISTOR
TO-3
! ! ! High Current Capability High Power Dissipation Complementary to MJ3055
ABSOLUTE MAXIMUM RATING (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Curre |
 Wing Shing Computer Components |
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| 11 | MJ2955 | COMPLEMENTARY SILICON POWER TRANSISTORS TAB
1 2
TO-3 Figure 1. Internal schematic diagram
2N3055, MJ2955
Complementary power transistors
Datasheet - production data
Features
• Low collector-emitter saturation voltage • Complementary NPN - PNP transistors
Applications
• General purpose • Audio amplifier
Description
The devices are |
 ST Microelectronics |
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| 10 | MJ2955 | 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3055/D
Complementary Silicon Power Transistors
. . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1 |
 Motorola Semiconductors |
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