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Datasheet MG200Q1JS40 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MG200Q1JS40 | Silicon N Channel IGBT GTR Module TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q1JS40
MG200Q1JS40
High Power Switching Applications Chopper Applications
Unit: mm
l High input impedance l High speed : tf = 0.5µs (max)
trr = 0.5µs (max) l Low saturation voltage
: VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are i |  Toshiba | igbt |
MG2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MG200 | EnFlex MG-200 Control Server Gateway ETC gate | | |
| 2 | MG200 | 2400 MHz Mobile Antenna ETC data | | |
| 3 | MG200F6ES61 | Compact IGBT Series Module
MG200J6ES61 Six IGBTMOD™ Compact IGBT Series Module
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
200 Amperes/600 Volts
A D J H
N P
L K U G DETAIL "A" M
C
U V W
B
F
E
H Q N P Q R S T
V W X P
4
R P
CN-2
2
CN-1
1 3 5 7
CN-1:  Powerex Power Semiconductors igbt | | |
| 4 | MG200H1AL2 | IGBT, Insulated Gate Bipolar Transistor Toshiba Semiconductor igbt | | |
| 5 | MG200H1FL1A | IGBT, Insulated Gate Bipolar Transistor Toshiba Semiconductor igbt | | |
| 6 | MG200J2YS50 | Silicon N Channel IGBT GTR Module TOSHIBA GTR Module Silicon N Channel IGBT
MG200J2YS50
MG200J2YS50
High Power Switching Applications Motor Control Applications
Unit: mm
l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High Speed : tf = 0.30µs Toshiba igbt | | |
| 7 | MG200J6ES61 | Compact IGBT Series Module
MG200J6ES61 Six IGBTMOD™ Compact IGBT Series Module
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
200 Amperes/600 Volts
A D J H
N P
L K U G DETAIL "A" M
C
U V W
B
F
E
H Q N P Q R S T
V W X P
4
R P
CN-2
2
CN-1
1 3 5 7
CN-1: Powerex Power Semiconductors igbt | |
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