|
|
Datasheet MBRAF2H100T3G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MBRAF2H100T3G | Surface Mount Schottky Power Rectifier MBRAF2H100T3G
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, |
 ON Semiconductor |
 |
| 1 | MBRAF2H100T3G | Surface Mount Schottky Power Rectifier MBRAF2H100
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hig |
ON Semiconductor |
|
| Esta página es del resultado de búsqueda del MBRAF2H100T3G. Si pulsa el resultado de búsqueda de MBRAF2H100T3G se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |