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Datasheet MBR2030CTL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MBR2030CTL | Dual Schottky Power Rectifier MBR2030CTL
Preferred Device
SWITCHMODE™ Dual Schottky Power Rectifier
The MBR2030CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally su |
 ON Semiconductor |
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| 2 | MBR2030CTL | Schottky Barrier Rectifier ( Diode ) Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR2030CTL
FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·High dv/dt capability ·Pb-Free Packages are Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
p |
 Inchange Semiconductor |
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| 1 | MBR2030CTL | 20A SCHOTTKY RECTIFIERS MBR2015CTL-MBR2030CTL
High-reliability discrete products and engineering services since 1977
20A SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), s |
 Digitron Semiconductors |
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