Datasheet LP230-50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LP230-50	POWER TRANSFORMER POWER TRANSFORMER 1. CONFIGURATION & DIMENSIONS : LP230-50 (F) SERIES 50.30 (1.980) 1.00 (0.041) 6.00 (0.236) 1 2 5 6 8 7 PC terminal plug-in mounting B H Max. B A W 4 3 L PCB Pattern UNIT : mm (inch) SIZE 12 L 64.70 (2.547) W 50.00 (1.969) H 26.30 (1.035) A 50.80 (2.000) B 12.70 (0	Superworld Electronics

LP230 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LP2301ALT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) ● S- Prefix for Automotive and Other Applications Requiring Unique Site and	LRC
LP2301LT1G	20V P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 LP2301LT1G Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Charact	Leshan Radio Company
LP2305LT1G	30V P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 85 mΩ RDS(ON), [email protected], [email protected] = 130mΩ LP2305LT1G 3 1 2 SOT– 23 (TO–236AB) FEATURES Advanced trench process technolog	Leshan Radio Company

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Número de pieza	Descripción	Fabricantes	PDF
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