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Datasheet LN9926L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | LN9926L | 20V Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD.
20V Dual N-Channel Enhancement-Mode MOSFET
VDS= 20V RDS(ON), [email protected], Ids@4A = 28 m RDS(ON), [email protected], Ids@2A = 40 m Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li io |
 LRC |
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| 1 | LN9926LT1G | Dual N-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD.
LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
Fea |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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