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Datasheet K4N56163QF-GC Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K4N56163QF-GC | 256Mbit gDDR2 SDRAM K4N56163QF-GC
256M gDDR2 SDRAM
256Mbit gDDR2 SDRAM
Revision 2.0 October 2005
Notice
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPP | Samsung | data |
K4N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4N25 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25 • K4N25A
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio KODENSHI KOREA CORP data | | |
2 | K4N25A | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25 • K4N25A
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio KODENSHI KOREA CORP data | | |
3 | K4N25G | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25G • K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 6 5 4 0.25 6.4
DIMENSION
(Unit : mm)
0.51Min.
3.8
• TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Tra KODENSHI KOREA CORP data | | |
4 | K4N25H | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25G • K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 6 5 4 0.25 6.4
DIMENSION
(Unit : mm)
0.51Min.
3.8
• TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Tra KODENSHI KOREA CORP data | | |
5 | K4N26 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N26
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62
(Unit : mm)
0.25
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% KODENSHI KOREA CORP data | | |
6 | K4N26323AE-GC | 128Mbit GDDR2 SDRAM K4N26323AE-GC
128M GDDR2 SDRAM
128Mbit GDDR2 SDRAM
1M x 32Bit x 4 Banks GDDR2 SDRAM
with Differential Data Strobe and DLL
Revision 1.7 January 2003
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.7 (Jan. 2003)
K4N26323AE-GC
128M GDDR2 SDR Samsung data | | |
7 | K4N27 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N27
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% KODENSHI KOREA CORP data | |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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