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Datasheet IXTP6N50P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IXTP6N50P   Power MOSFET ( Transistor )

PolarHVTM Power MOSFET IXTA 6N50P IXTP 6N50P N-Channel Enhancement Mode Avalanche Rated VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 M�
 IXYS
IXYS		 datasheet IXTP6N50P pdf

IXTP6N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IXTP6N50D2

Depletion Mode MOSFET

Preliminary Technical Information Depletion Mode MOSFET IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 VDSX ID(on) RDS(on) = > ≤ 500V 6A 500mΩ N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Continu
 IXYS Corporation
IXYS Corporation		 datasheet pdf - IXYS Corporation
IXTP6N50P

Power MOSFET ( Transistor )

PolarHVTM Power MOSFET IXTA 6N50P IXTP 6N50P N-Channel Enhancement Mode Avalanche Rated VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to
IXYS
IXYS		 datasheet pdf - IXYS
IXTP6N100D2

Depletion Mode

Preliminary Technical Information Depletion Mode MOSFET IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 VDSX ID(on) RDS(on) = > ≤ 1000V 6A 2.2Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C Cont
 IXYS
IXYS		 datasheet pdf - IXYS


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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