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Datasheet IXGH30N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | IXGH30N60 | Low VCE(sat) IGBT VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V |
IXYS Corporation |
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10 | IXGH30N60A | Low VCE(sat) IGBT VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V |
IXYS Corporation |
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9 | IXGH30N60B | HiPerFASTTM IGBT HiPerFASTTM IGBT
IXGH30N60B IXGT30N60B
VCES IC25 VCE(sat) tfi
= 600 V = 60 A = 1.8 V = 100 ns
Symbol VCES VCGR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 3 |
IXYS Corporation |
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8 | IXGH30N60B2 | (IXGH30N60B2 / IXGT30N60B2) HiPerFAST IGBT
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B2 IXGT 30N60B2
VCES IC25 VCE(sat) tfi typ
= 600 V = 70 A < 1.8 V = 82 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Tes |
IXYS Corporation |
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Número de pieza | Descripción | Fabricantes | |
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